Infineon Invests 1.1 Billion Euros in 300mm GaN Mass Production | AI Data Center Power Supplies

Machine-translated from Japanese. Please refer to the original for technical details.

Last Updated: October 28, 2026

Updated October 28, 2026: Infineon to Invest Approximately 1.1 Billion Euros in 300mm GaN Mass Production

On October 27, 2026, Infineon Technologies announced that it would invest approximately 1.1 billion euros in its Villach, Austria, facility to establish mass production facilities for next-generation GaN power semiconductors using 300mm wafers.The company plans to utilize existing cleanrooms, with the investment period extending through 2034 and production scheduled to begin by the end of 2027.

Confirmed Facts

Infineon plans to establish mass production facilities for GaN power semiconductors using 300mm wafers in Europe.
The investment amounts to approximately 1.1 billion euros and will be directed toward the Villach site in Austria.
Production is scheduled to begin by the end of 2027. The company plans to increase production in line with market demand.
According to Infineon, a single 300mm wafer can produce 2.3 times as many chips as a 200mm wafer.
The European Commission has approved 319 million euros in state aid under the European Semiconductor Act. The Austrian government is expected to make a formal grant decision within the prescribed timeframe.
Applications cited include AI data centers, energy infrastructure, electric vehicles, robots, and consumer electronics.

Unconfirmed details: This announcement did not disclose the monthly production capacity of the 300mm line, the full part numbers of the target products, supply allocations by customer, mass production prices, or standard lead times.The plan to begin production by the end of 2027 pertains to medium- to long-term supply capacity. It does not indicate an immediate improvement in the inventory levels or lead times of currently available GaN products.

Impact on Procurement and Actions for Purchasing Personnel

The transition to 300mm wafers has the potential to increase the number of chips obtained from the same number of wafers, thereby enhancing future mass production efficiency. However, actual supply volumes will vary depending on yield rates, product mix, customer qualification, and market demand. It is not possible to determine the timing of price declines or the resolution of supply shortages based solely on the amount of this investment.

Distinguish Between Current and Future Products: For all active part numbers, verify the current production sites, standard lead times, and supply commitments.
Share Plans for Projects Starting in 2027 and Beyond: For 800V AI server power supplies and high-power-density power supplies, provide manufacturers and authorized sales channels with early notice regarding quantities, evaluation timelines, and mass production start dates.
Prioritize alternative evaluations: Even within the same voltage class, verify gate conditions, on-resistance, packaging, cooling methods, and pin configurations. Avoid simple replacements.
Separate announcements from supply terms: Factory investments represent medium- to long-term strategic directions. Confirm quoted prices, minimum order quantities (MOQs), samples, and mass production lead times on a part-number-by-part-number basis.

Practical Comments from AI Components: This investment indicates Infineon’s strategy to advance GaN to the mass production stage as a key technology for AI data center power supplies. However, in procurement practice, it is necessary to distinguish between “300mm mass production plans” and “supply conditions for part numbers currently available for purchase.”For mass production projects starting in 2027 or later, please verify the supply plan for the entire bill of materials (BOM), including not only the GaN device itself but also gate drivers, control ICs, magnetic components, and cooling components.

If you need to confirm the availability of Infineon’s GaN 800V AI server power supply components or investigate alternatives, please contact AI Components with the manufacturer name, full part number, required quantity, desired delivery date, target price, and whether alternatives are available.

Source: Infineon Official Announcement (October 27, 2026) / Reuters (October 27, 2026)

Updated October 22, 2026: Infineon and NVIDIA Expand Collaboration on 800V GaN Power Supplies for AI Data Centers

On October 21, 2026, Infineon Technologies announced that it would expand its collaboration with NVIDIA on power supply architectures for 800V DC (VDC) AI data centers. The focus of this collaboration is on high-voltage intermediate bus converters (IBCs).This announcement outlines the direction toward using GaN in 800V power supplies and the corresponding conversion ratios; it does not indicate the launch of specific new products or supply shortages.

Confirmed Facts

Infineon and NVIDIA are collaborating on an 800V DC power architecture for AI data centers.
The focus is on high-voltage IBCs that step down the main bus voltage supplied to accelerator cards to lower voltages.
Infineon explains that its GaN portfolio supports conversion ratios from 800V to 50V, 12V, and 6V.
For the IBC stage, they cite a maximum switching frequency of 1 MHz, stating that this leads to smaller magnetic and passive components, higher power density, and reduced board height.
In addition to GaN devices, the company presents a system configuration for IBCs that combines PSoC Control C3 and EiceDRIVER.
The collaboration between the two companies includes not only IBC but also power path protection, such as hot-swap capabilities for 800V DC racks.

Items not confirmed in this announcement: Infineon has not disclosed the exact part numbers of the GaN devices to be used, the sample availability date, the mass production start date, pricing, minimum order quantities (MOQ), standard lead times, or supply capacity. Therefore, it cannot be definitively concluded at this time that securing inventory of specific part numbers will be necessary or that lead times will be extended.

Impact on Procurement and Actions for Purchasing Personnel

The scope of procurement for 800V AI server power supplies extends beyond GaN devices alone to include the system BOM, which comprises gate drivers, digital control ICs, magnetic components, passive components, and power path protection ICs.For projects where these components are planned for use, please confirm with the design department which conversion configuration—800V to 50V, 12V, or 6V—will be used, and manage the required components separately.

Determine the conversion ratio and power stage: The BOM and evaluation conditions differ for 800V→50V, 800V→12V, and 800V→6V.
Confirm the timing for full part number disclosure: Contact Infineon or authorized sales channels to confirm recommended configurations, samples, and mass production schedules for GaN, PSoC Control C3, and EiceDRIVER.
Confirm supply terms separately from the announcement: A partnership announcement alone does not provide information on inventory, price, MOQ, or delivery times. Make a separate inquiry specifying the quantity and desired delivery date.
Avoid simply substituting products from other manufacturers: Even with the same GaN, voltage ratings, gate conditions, packages, thermal designs, and control methods may differ. Select alternative candidates based on design evaluation.

Practical Comments from AI Components:The key point here is that the focus for 800V GaN components for AI racks has shifted from comparing individual components to comparing IBC systems that include control ICs and drivers. At this stage, rather than rushing to make a purchase, it is more practical to finalize the conversion ratio and exact part numbers, and simultaneously confirm samples, mass production timelines, and alternative candidates.

If you need to source or investigate alternatives for Infineon GaN, PSoC Control C3, EiceDRIVER, or 800V AI server power supply components, please contact AI Components with the manufacturer name, complete part number, required quantity, desired delivery date, target price, and whether alternatives are available.

Source: Infineon Official Announcement (October 21, 2026)

On September 30, 2026, Renesas Electronics announced the “TP65H020G4PLSGBD,” a 650V GaN device supporting dual-sided cooling, designed for 800V high-voltage DC (HVDC) power architectures in megawatt-class AI data centers.Furthermore, on October 6, the company announced its first four 100V E-mode GaN discrete device part numbers, primarily intended for use in 48V buses and DC-DC power stages in AI data centers:—“RTP100E005G1FL,” “RTP100E2P6G1FL,” “RTP100E1P8G1FL-DSC,” and “RTP100E1P2G1FL-DSC”—primarily intended for use in 48V buses and DC-DC power stages within AI data centers, and have begun offering them alongside evaluation boards.

This series of announcements focuses not on the GPUs or HBM in AI servers themselves, but rather on the power semiconductor bottleneck that occurs when converting power from 800V HVDC to 48V or lower.The 650V products are currently in the sample stage with mass production targeted for 2027, while the manufacturer has explicitly stated that the 100V products are “available now,” indicating that they are in different procurement phases. AI Components distinguishes between verified facts and market forecasts, and organizes the procurement implications on a part-number-by-part-number basis.

Verified Facts

Renesas announced the 650V GaN “TP65H020G4PLSGBD” on September 30, 2026.
The product is a D-Mode device based on the Gen IV Plus GaN architecture.
It is rated at 650V, has an on-resistance of 20 mΩ, and is housed in an 8×8 mm double-sided cooling (DSC) PQFN package.
Renesas explains that the footprint has been reduced by 57% compared to the existing 10×15mm TOLT package.
The company states that the top-side thermal impedance has been reduced by 10% compared to conventional topside-cooled packages.
Its primary applications are 800V DC/DC intermediate bus converters (IBCs), battery backup units (BBUs), and capacitor bank units (CBUs) in AI data centers.
Renesas cites the trend of rack power in AI data centers rising from approximately 120 kW to the megawatt class as the background for this development.
The company states that its 6 kW, 800 V to 48 V LLC DCX reference design achieves a power density of 2.6 kW/in³.
As of September 30, 2026, the company is providing samples to major AI data center OEMs and ODMs, with mass production scheduled for mid-2027.

Key Specifications and Availability

Item	Confirmed Details
Part Number	TP65H020G4PLSGBD
Device	650V GaN, D-Mode
On-resistance	20 mΩ
Package	8×8 mm dual-sided cooling PQFN
Primary Applications	800 V HVDC for AI data centers, IBC, BBU, CBU
Samples	Sampling to begin on September 30, 2026
Mass Production Plan	Mid-2027

Updated October 7, 2026: Renesas 100V E-mode GaN—4 Part Numbers

Confirmed Fact: On October 6, 2026, Renesas announced its first 100V E-mode GaN discrete devices“RTP100E005G1FL,” “RTP100E2P6G1FL,” “RTP100E1P8G1FL-DSC,” and “RTP100E1P2G1FL-DSC.”Intended primarily for use in 48V buses in AI data centers, DC-DC power supplies, robots, and factory automation (FA), the manufacturer has already begun offering these devices along with compatible evaluation boards. RDS(on) ranges from 5 mΩ to 1.2 mΩ, and configurations include bottom-side cooling and dual-side cooling.

Impact on procurement: We have now reached the stage where evaluation can be conducted using specific part numbers for both the 650V high-voltage side and the 100V low-voltage side. However, “available now” does not imply availability, pricing, or standard lead times within Japan.It is necessary to confirm each case individually by providing the complete part number, required quantity, desired delivery date, target price, availability of alternatives, and whether an evaluation board is required.

AI Components Practical Comment: Reviewing GaN and peripheral control ICs across the entire BOM—from 800V to 48V to 6V for CPU and GPU core power supplies—is more likely to lead to a project.Even within the same 100V class, gate conditions, cooling methods, packages, and pin configurations vary; therefore, we do not recommend simply replacing silicon MOSFETs or GaN devices from other manufacturers.

Updated October 6, 2026: Microchip × Navitas 800V → 6V AI Rack Power Supply

On October 5, 2026, Microchip Technology and Navitas Semiconductor announced a 20kW reference design that directly converts 800V DC to 6V DC for AI data centers.

Published BOM: Microchip has listed the dsPIC33AK256MPS306, TA100, MCP9700, MCP1755, and MCP16361 as related components, while Navitas has listed the 650V GaN NV6034.Design documentation is available upon request, and the design is scheduled to be showcased at the OCP Global Summit from October 12–15.

Impact on Procurement: Search intent for components for 800V power supplies is expanding from GaN devices alone to BOM-level searches that include control ICs and peripheral ICs. However, this announcement does not constitute primary information indicating supply shortages or price increases; inventory, pricing, and standard lead times must be confirmed on a case-by-case basis.

Action for Purchasing Personnel: For parts such as the NV6034, dsPIC33AK256MPS306, and TA100, please compile a list of required quantities, desired delivery dates, and potential substitutes, and then confirm sample availability and delivery times through official channels.

Impact on Procurement

At this point, it is not appropriate to view this announcement as introducing “new off-the-shelf products that can be procured in large quantities immediately.” Renesas has explicitly stated only the start of sampling and plans for mass production in mid-2027; mass production prices, standard lead times, supply capacity during mass production, and distributor inventory cannot be confirmed from this announcement.

On the other hand, if the shift toward 800V HVDC in AI data centers continues, 650V-class GaN could become a key procurement category distinct from GPUs and HBM. This is because, as rack power densities increase, power conversion efficiency, board space, and thermal design have a significant impact on the overall BOM.

It is particularly important to note that even among “650V GaN” devices, differences in D-Mode/E-Mode, gate drive conditions, packaging, thermal design, pinout, and switching characteristics mean that a simple replacement may not always be possible.Although Renesas states that these devices can be driven by standard silicon gate drivers, the feasibility of adopting them into existing designs requires a case-by-case evaluation.

Actions Purchasing Personnel Should Take

Confirm Plans to Adopt GaN in AI Server and Power Supply BOMs Check the BOM not only for
GPUs and HBM but also for power semiconductors used in the 800V-to-48V, 12V, and 6V conversion stages.
Manage
samples and mass-production units separately The project is currently in the sampling phase. Until mass production is scheduled to begin in mid-2027, it is important not to confuse evaluation samples with mass-production procurement terms.
Verify
Supply Conditions Using the Full Part Number Contact official sales channels using the full part number—such as “TP65H020G4PLSGBD” rather than just “650V GaN”—to confirm sample availability, MOQ, mass production timeline, standard lead time, and qualification requirements.
Verify Specification Compatibility for Second Sources: Even within the
same voltage class, products may not be drop-in compatible. Evaluate them in collaboration with the design department, taking into account gate drivers, thermal design, packaging, and PCB layout.
In power supply designs for
AI servers undergoing preliminary evaluation with the assumption of mass production in 2027, the evaluation period may be extended. It is more practical to have the design, procurement, and quality departments work in parallel during the sample stage rather than waiting until after mass production begins to start evaluation.

Practical Comments from AI Components

What is important about this news is not so much the product announcement itself—that “a new GaN device has been released”—but rather the fact that power supply design for AI data centers is shifting from the 120 kW class to the megawatt class, and that 800 V HVDC and high-density power conversion are becoming central themes in component selection.

However, the TP65H020G4PLSGBD is not yet in mass production. From a procurement perspective, there is no need to jump to conclusions about price increases or supply shortages at this stage. Rather, for projects where adoption is planned, it is more practical to confirm the following four points early on: “securing samples,” “mass production timing,” “certification schedule,” and “alternative candidates.”

Furthermore, demand for AI server-related components is concentrated across multiple categories, including HBM, DDR5, enterprise SSDs, and MLCCs. Whether lead times for power supply BOMs—including GaN—will actually lengthen will need to be assessed based on future mass production ramp-ups and customer adoption rates.

Frequently Asked Questions

Is the TP65H020G4PLSGBD already available for mass-production purchase?

According to Renesas’ announcement on September 30, 2026, sampling is set to begin, with mass production planned for mid-2027. At this point, it cannot be said that mass-production inventory or standard lead times have been finalized.

Can a 650V GaN device from another manufacturer be used as a direct replacement?

This cannot be done across the board. It is necessary to compare not only the voltage rating but also D-Mode/E-Mode, gate conditions, on-resistance, package, thermal characteristics, pinout, and switching characteristics.

Why is GaN attracting attention in AI data centers?

As power per rack increases, losses during power conversion, heat generation, and board space become major constraints. GaN makes it easier to achieve high-frequency switching and high power density, making it a candidate for high-density power supply applications that convert from 800V to 48V or lower.

Related Market Information

Renesas GaN and AI Server Power Supply Component Procurement Consultation

If you require samples, mass production procurement, or alternative part research for GaN, AI server power semiconductors, or parts with long lead times—including the Renesas “TP65H020G4PLSGBD”—please provide AI Components with the manufacturer name, complete part number (MPN), required quantity, desired delivery date, target price, and whether alternatives are available.

We will verify, on a case-by-case basis, potential authorized and independent suppliers both domestically and internationally, sample availability, mass production timelines, alternative options, and traceability requirements. We do not make definitive statements regarding unconfirmed inventory, prices, or delivery times; instead, we provide guidance based on information that has been verified.

Reference Information

*This article has been updated based on official information from Infineon, NVIDIA, Renesas, Microchip, and Navitas available as of October 28, 2026.The start date for production of 300mm GaN equipment, as well as the prices, delivery times, and supply terms for individual products, are subject to change. Please verify the latest information with the manufacturer or authorized sales channels before making a final decision or placing an order.

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